UNIVERSITY OF IOANNINA - DEPARTMENT OF PHYSICS

DIVISION OF SOLID STATE PHYSICS and the PHYSICS OF MATERIALS & SURFACES

 

 

 

 

 
Evangelos K. Evangelou

Assistant Professor

 

Office:  Ö3-104â

Laboratory: Ö3-105

Office Tel No: +30-26510 98494

Lab Tel No: +30-26510 98498

Fax:   +30-26510 98677

Å-mail: eevagel@uoi.gr

Personal Webpage: http://users.uoi.gr/eevagel

 

 

Education

·      1994: Ph.D. in Physics, University of Ioannina, Ioannina, Greece.

·      1985: B.Sc. in Physics, University of Ioannina, Ioannina, Greece.

 

Career Summary

·      2003-today: Assistant Professor, Department of Physics, University of Ioannina.

·      1995-2003: Lecturer, Department of Physics, University of Ioannina.

 

Research Interests

·      Physics and technology of low-dimensional semiconductor devices: Thin and ultra-thin films, surfaces and interfaces of MOS and Schottky diodes.

·      Study of the electrical and electronic properties of solid state devices using admittance spectroscopy, current-voltage and vapacitance-voltage measurements.

·      Electrical characterization of MOS, MIM and Schottky devices. Defect characterization by means of Deep Level Transient Spectroscopy.

·      Low and high temperature measurements of semiconductor devices.

Selected Publications

[1] Í.Konofaos, Å.K.Evangelou, X.Aslanoglou, M.Kokkoris, R.Vlastou,  "Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices", Semiconductor Science & Technology 19, pp. 50-53 (2004).

[2] S.Logothetidis, P.Patsalas, E.K.Evangelou, N.Konofaos, J.Tsiaousis and N.Frangis,  "Dielectric Properties and Electronic Transitions of Porous and Nanostructured CeO2 Films", Materials Science and Engineering B, 109, 1-3, pp. 69-73 (2004).

[3] N.Konofaos, E.K.Evangelou, Z. Wang and U.Helmersson,  “Characterisation of Al/SrTiO3/ITO capacitors for microelectronic applications”
IEEE Transactions on Electron Devices, 51 (7), pp. 1202-1205. (2004).

[4] Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa and M. Caymax, “HfO2 high- k gate dielectrics on Ge (100) by atomic oxygen beam deposition”, Appl. Phys. Lett. 86, 032908 (2005) .

[5] Í.Konofaos, I.Deliyianakis, E.K.Evangelou, M.Gioti, S.Logothetidis, “An electrical, optical and EPR study of room temperature deposited CNX films on Si.” Thin Solid Films, Vol. 482(1-2), pp. 270-274 (2005).

[6] N Konofaos, Z Wang, Th K Voilas, S N Georga, C A Krontiras, M N Pisanias, J Sotiropoulos and E K Evangelou, “Temperature dependence of the electrical properties of MOS devices constructed by sol gel deposited BaTiO3 films on p-Si”,  Journal of Electronic Materials, 34(9), pp. 1259-1263, (2005).

[7] Dimoulas, G. Vellianitis, G. Mavrou, E.K. Evangelou, K. Argyropoulos, and M. Houssa, “Minority carrier response time in HfO2/Ge metal -insulator -semiconductor capacitors”, Microelectronic Engineering 80, 34 (2005).

[8] Dimoulas, G. Vellianitis, G. Mavrou, E.K. Evangelou, A. Sotiropoulos  “Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors”, Appl. Phys. Lett. 86, 223507 (2005).   

[9] Dimoulas, D.P. Brunco, S. Ferrari, J.W. Seo, Y. Panayiotatos, A. Sotiropoulos, T. Conard, M. Caymax, S. Spiga, M. Fanciulli, Ch. Dieker, E. K. Evangelou, S. Galata, M. Houssa, M. M. Heyns,  “Interface engineering for Ge MOS devices”,  accepted for publication in Thin Solid Films, 2006.